Vertical junction field effect transistors and diodes having graded doped regions and methods of making

Details for Australian Patent Application No. 2010262784 (hide)

Owner SS SC IP, LLC

Inventors Cheng, Lin; Mazzola, Michael

Agent Davies Collison Cave

Pub. Number AU-A-2010262784

PCT Pub. Number WO2010/148266

Priority 61/218,758 19.06.09 US

Filing date 18 June 2010

Wipo publication date 23 December 2010

International Classifications

H01L 21/337 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 29/80 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/808 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

2 February 2012 PCT application entered the National Phase

  PCT publication WO2010/148266 Priority application(s): WO2010/148266

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