A SUBSTRATE FOR EPITAXY AND A METHOD OF PREPARING THE SAME

Details for Australian Patent Application No. 2003285769 (hide)

Owner AMMONO SP. Z O.O.

Inventors GARCZYNSKI, Jerzy; SIERZPUTOWSKI, Leszek; KANBARA, Yasuo; DWILINSKI, Robert; DORADZINSKI, Roman

Pub. Number AU-A-2003285769

PCT Number PCT/JP2003/0159

PCT Pub. Number WO2004/053210

Priority P-357696 11.12.02 PL; P-357707 11.12.02 PL; P-357708 11.12.02 PL; P-357709 11.12.02 PL

Filing date 11 December 2003

Wipo publication date 30 June 2004

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 025/18 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

H01L 021/205 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

1 April 2004 Complete Application Filed

  Priority application(s): P-357696 11.12.02 PL; P-357707 11.12.02 PL; P-357708 11.12.02 PL; P-357709 11.12.02 PL

5 August 2004 Application Open to Public Inspection

  Published as AU-A-2003285769

25 August 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

1 September 2005 Corrigenda

  Applications OPI - Name Index Under the name AMMONO SP. Z O.O., Application No. 2003285769, under INID (71) correct the name to read AMMONO SP. Z O.O.; NICHIA CORPORATION

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