METHOD FOR FORMING INSULATING FILM ON SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATEPROCESSING APPARATUS

Details for Australian Patent Application No. 2003264511 (hide)

Owner TOKYO ELECTRON LIMITED

Inventors IGETA, Masanobu; AOYAMA, Shintaro; SHINRIKI, Hiroshi

Pub. Number AU-A-2003264511

PCT Number PCT/JP03/11971

PCT Pub. Number WO2004/027852

Priority 2002-273709 19.09.02 JP

Filing date 19 September 2003

Wipo publication date 8 April 2004

International Classifications

H01L 021/318 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/31 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

11 December 2003 Complete Application Filed

  Priority application(s): 2002-273709 19.09.02 JP

20 May 2004 Application Open to Public Inspection

  Published as AU-A-2003264511

9 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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