DOPED GROUP III-V NITRIDE MATERIALS, AND MICROELECTRONIC DEVICES AND DEVICE PRECURSOR STRUCTURES COMPRISING SAME

Details for Australian Patent Application No. 2003224709 (hide)

Owner ADVANCED TECHNOLOGY MATERIALS, INC.

Inventors BRANDES, George, R.; FLYNN, Jeffrey, S.

Pub. Number AU-A-2003224709

PCT Number PCT/US03/08355

PCT Pub. Number WO2003/083950

Priority 10/107,001 25.03.02 US

Filing date 19 March 2003

Wipo publication date 13 October 2003

International Classifications

H01L 029/205 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 031/0304 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

H01L 021/36 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/778 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

Event Publications

7 August 2003 Complete Application Filed

  Priority application(s): 10/107,001 25.03.02 US

20 November 2003 Application Open to Public Inspection

  Published as AU-A-2003224709

9 December 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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