TRENCH MOSFET DEVICE WITH POLYCRYSTALLINE SILICON SOURCE CONTACT STRUCTURE

Details for Australian Patent Application No. 2002366175 (hide)

Owner GENERAL SEMICONDUCTOR, INC.

Inventors HSHIEH, Fwu-luan; SO, Koon, Chong; AMATO, John, E.; TSUI, Yan, Man

Pub. Number AU-A-2002366175

PCT Number PCT/US02/37288

PCT Pub. Number WO2003/044866

Priority 10/010,484 20.11.01 US

Filing date 20 November 2002

Wipo publication date 10 June 2003

International Classifications

H01L 029/76 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

14 August 2003 Complete Application Filed

  Priority application(s): 10/010,484 20.11.01 US

21 August 2003 Application Open to Public Inspection

  Published as AU-A-2002366175

5 August 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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