NITRIDE SEMICONDUCTOR ELEMENT

Details for Australian Patent Application No. 2002241310 (hide)

Owner NICHIA CORPORATION

Inventors NAGAHAMA, Shinichi; YANAMOTO, Tomoya

Pub. Number AU-A-2002241310

PCT Pub. Number WO2002/080320

Priority 2001-091578 28.03.01 JP; 2001-144214 15.05.01 JP; 2001-208553 09.07.01 JP; 2001-230684 30.07.01 JP

Filing date 28 March 2002

Wipo publication date 15 October 2002

International Classifications

H01S 005/343 Semiconductor lasers

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01L 031/04 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - adapted as conversion devices

H01L 031/10 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors

Event Publications

3 April 2003 Application Open to Public Inspection

  Published as AU-A-2002241310

19 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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